Category: Characterization

Symposium B

Surface, Interface and Thin Film Growth

The objective of this symposium is to communicate and discuss the recent progress in the understanding of the physical properties and phenomena of surfaces, interfaces and thin films involved in material growth, processing and application. Such understanding is essential to the search for effective surface and interface engineering approaches to improve material quality and device performance. This symposium will accommodate sessions on the analysis of surfaces, interfaces and thin-films, characterization and control of vacuum-based material growth and processing, and their applications to materials used in electronics, spintronics, optoelectronics and catalysis. Specific topics include:

  • Characterization of surfaces, interfaces and thin films;
  • Understanding and control of surface processes in vacuum-based material growth processes such as MBE, ALD, PLD, PECVD;
  • Understanding and control the morphology and size in nanostructural self-assembly;
  • Surface experimental studies (e.g. STM/STS, ARPES) of novel materials (topological, superconducting, magnetic, 2D materials);
  • Interface engineering for molecular and organic electronics;
  • Metal contacts and dielectrics in conventional and 2D semiconductors;
  • Surface/interface issues in heterogeneous catalysis, electrocatalysis, photocatalysis.
  • Valeri AFANASIEV, ‎University of Leuven, Belgium
  • Simon BROWN, University of Canterbury, New Zealand
  • Lan CHEN, Institute of Physics, China
  • Dongzhi CHI, Institute of Materials Research and Engineering, A*STAR, Singapore
  • Yinghao CHU, Taiwan Chiao Tung University, Taiwan
  • Michael FUHRER, Monash University, Australia
  • Hongjun GAO, Institute of Physics, CAS, China
  • Jiandong GUO, Institute of Physics, Chinese Academy of Sciences, China
  • Yukio HASEGAWA, University of Tokyo, Japan
  • Andreas J. HEINRICH, Center for Quantum Nanoscience, Institute for Basic Science, South Korea
  • Ying JIANG, Peking University, China
  • Howon KIM, University of Hamburg, Germany
  • Yaoyi LI, Shanghai Jiao Tong University, China
  • Wilfrid PRELLIER, CRISMAT Laboratory, CNRS, France
  • Nikolai S. SOKOLOV, A.F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, Russia
  • Gan WANG, Southern University of Science and Technology, China
  • Bent WEBER, Nanyang Technological University, Singapore
  • Maohai XIE, Hong Kong University, Hong Kong
  • Chan-Ho YANG, KAIST, South Korea
  • Ming YANG, Institute of Materials Research and Engineering, A*STAR, Singapore
  • Zhenyu ZHANG, Univ. Sci. Tech. of China, China
  • Michael ZHARNIKOV, Heidelberg University, Germany


Xuesen WANG
National University of Singapore, Singapore


Shijie WANG
Institute of Materials Research & Engineering, A*STAR, Singapore

Nanyang Technological University, Singapore

Haiming GUO
Institute of Physics, Chinese Academy of Sciences, China

Jun-Ming LIU
Nanjing University, China


Xuesen WANG
National University of Singapore, Singapore